2SA1483-Y(TE12L,F) Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: 2SA1483-Y(TE12L,F)
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 45V
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: PW-MINI
Description: 2SA1483-Y(TE12L,F)
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 45V
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: PW-MINI
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Technische Details 2SA1483-Y(TE12L,F) Toshiba Semiconductor and Storage
Description: 2SA1483-Y(TE12L,F), Packaging: Tape & Reel (TR), Package / Case: TO-243AA, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Current - Collector (Ic) (Max): 200mA, Voltage - Collector Emitter Breakdown (Max): 45V, DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 1V, Frequency - Transition: 200MHz, Supplier Device Package: PW-MINI.
Weitere Produktangebote 2SA1483-Y(TE12L,F)
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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2SA1483-Y(TE12L,F) | Hersteller : Toshiba |
 Bipolar Transistors - BJT Pb-F POWER TRANSISTOR PW-MINI MOQ=1000 V=45V F=200MHZ |
Produkt ist nicht verfügbar |