Technische Details 2SA1507S ON Semiconductor
Description: TRANS PNP 160V 1.5A TO126ML, Packaging: Bulk, Package / Case: TO-225AA, TO-126-3, Mounting Type: Through Hole, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA, Current - Collector Cutoff (Max): 1µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V, Frequency - Transition: 120MHz, Supplier Device Package: TO-126ML, Current - Collector (Ic) (Max): 1.5 A, Voltage - Collector Emitter Breakdown (Max): 160 V, Power - Max: 1.5 W.
Weitere Produktangebote 2SA1507S
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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| 2SA1507S | Hersteller : ONSEMI |
 Description: ONSEMI - 2SA1507S - 2SA1507S, SINGLE BIPOLAR TRANSISTORStariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 87 Stücke: Lieferzeit 14-21 Tag (e) |
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| 2SA1507S | Hersteller : ON Semiconductor |
Trans GP BJT PNP 160V 1.5A 1500mW 3-Pin TO-126ML Bag |
Produkt ist nicht verfügbar |
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2SA1507S | Hersteller : onsemi |
Description: TRANS PNP 160V 1.5A TO126ML Packaging: Bulk Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V Frequency - Transition: 120MHz Supplier Device Package: TO-126ML Current - Collector (Ic) (Max): 1.5 A Voltage - Collector Emitter Breakdown (Max): 160 V Power - Max: 1.5 W |
Produkt ist nicht verfügbar |