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2SA1586-GR,LXHF

2SA1586-GR,LXHF Toshiba

2D6DCAB1A5C4136FCB2EC2FD290FB7E58D7E0DAE199A407F916C882CD615B9D5.pdf
Hersteller: Toshiba
Bipolar Transistors - BJT AUTO AEC-Q PNP Tr VCEO:-50V Ic:-0.15A hFE:200-400 SOT-323 (USM)
auf Bestellung 7077 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+0.45 EUR
11+0.28 EUR
100+0.18 EUR
500+0.13 EUR
1000+0.11 EUR
3000+0.092 EUR
6000+0.081 EUR
Mindestbestellmenge: 7
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Technische Details 2SA1586-GR,LXHF Toshiba

Description: TRANS PNP 50V 0.15A USM, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Transistor Type: PNP, Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V, Frequency - Transition: 80MHz, Supplier Device Package: USM, Current - Collector (Ic) (Max): 150 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 200 mW.

Weitere Produktangebote 2SA1586-GR,LXHF nach Preis ab 0.12 EUR bis 0.49 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
2SA1586-GR,LXHF 2SA1586-GR,LXHF Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=19170&prodName=2SA1586 Description: TRANS PNP 50V 0.15A USM
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: USM
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
auf Bestellung 1595 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
36+0.49 EUR
60+0.3 EUR
100+0.19 EUR
500+0.14 EUR
1000+0.12 EUR
Mindestbestellmenge: 36
Im Einkaufswagen  Stück im Wert von  UAH
2SA1586-GR,LXHF 2SA1586-GR,LXHF Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=19170&prodName=2SA1586 Description: TRANS PNP 50V 0.15A USM
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: USM
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH