2SA1699E-PM-AA Fairchild Semiconductor
Hersteller: Fairchild SemiconductorDescription: 2SA1699E - PNP EPITAXIAL PLANAR
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 800mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Frequency - Transition: 70MHz
Supplier Device Package: 3-NP
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 600 mW
auf Bestellung 2999 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 523+ | 1.37 EUR |
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Technische Details 2SA1699E-PM-AA Fairchild Semiconductor
Description: 2SA1699E - PNP EPITAXIAL PLANAR, Packaging: Bulk, Package / Case: TO-226-3, TO-92-3 (TO-226AA), Mounting Type: Through Hole, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 800mV @ 5mA, 50mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V, Frequency - Transition: 70MHz, Supplier Device Package: 3-NP, Current - Collector (Ic) (Max): 200 mA, Voltage - Collector Emitter Breakdown (Max): 400 V, Power - Max: 600 mW.
Weitere Produktangebote 2SA1699E-PM-AA
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| 2SA1699E-PM-AA | Hersteller : ONSEMI |
Description: ONSEMI - 2SA1699E-PM-AA - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: TBA usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 2999 Stücke: Lieferzeit 14-21 Tag (e) |