2SA1768T-AN onsemi
Hersteller: onsemiDescription: TRANS PNP 160V 0.7A 3-NMP
Packaging: Bulk
Package / Case: SC-71
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 25mA, 250mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: 3-NMP
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 1 W
auf Bestellung 22500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1110+ | 0.45 EUR |
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Technische Details 2SA1768T-AN onsemi
Description: TRANS PNP 160V 0.7A 3-NMP, Packaging: Tape & Reel (TR), Package / Case: SC-71, Mounting Type: Through Hole, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 500mV @ 25mA, 250mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 5V, Frequency - Transition: 120MHz, Supplier Device Package: 3-NMP, Current - Collector (Ic) (Max): 700 mA, Voltage - Collector Emitter Breakdown (Max): 160 V, Power - Max: 1 W.
Weitere Produktangebote 2SA1768T-AN nach Preis ab 0.41 EUR bis 0.41 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||
|---|---|---|---|---|---|---|---|---|---|
| 2SA1768T-AN | Hersteller : ON Semiconductor |
Trans GP BJT PNP 160V 0.7A 1000mW 3-Pin NMP T/R |
auf Bestellung 22500 Stücke: Lieferzeit 14-21 Tag (e) |
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| 2SA1768T-AN | Hersteller : ONSEMI |
Description: ONSEMI - 2SA1768T-AN - 2SA1768T-AN, SINGLE BIPOLAR TRANSISTORS tariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 22500 Stücke: Lieferzeit 14-21 Tag (e) |
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2SA1768T-AN | Hersteller : onsemi |
Description: TRANS PNP 160V 0.7A 3-NMP Packaging: Tape & Reel (TR) Package / Case: SC-71 Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 25mA, 250mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 5V Frequency - Transition: 120MHz Supplier Device Package: 3-NMP Current - Collector (Ic) (Max): 700 mA Voltage - Collector Emitter Breakdown (Max): 160 V Power - Max: 1 W |
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