Technische Details 2SA1812T100Q ROHM
Description: TRANS PNP 400V 0.5A MPT3, Power - Max: 500 mW, Voltage - Collector Emitter Breakdown (Max): 400 V, Current - Collector (Ic) (Max): 500 mA, Part Status: Obsolete, Supplier Device Package: MPT3, Frequency - Transition: 12MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 50mA, 5V, Current - Collector Cutoff (Max): 1µA (ICBO), Vce Saturation (Max) @ Ib, Ic: 1V @ 10mA, 100mA, Operating Temperature: 150°C (TJ), Transistor Type: PNP, Mounting Type: Surface Mount, Package / Case: TO-243AA, Packaging: Tape & Reel (TR).
Weitere Produktangebote 2SA1812T100Q
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2SA1812T100Q | Hersteller : Rohm Semiconductor |
 Description: TRANS PNP 400V 0.5A MPT3Power - Max: 500 mW Voltage - Collector Emitter Breakdown (Max): 400 V Current - Collector (Ic) (Max): 500 mA Part Status: Obsolete Supplier Device Package: MPT3 Frequency - Transition: 12MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 50mA, 5V Current - Collector Cutoff (Max): 1µA (ICBO) Vce Saturation (Max) @ Ib, Ic: 1V @ 10mA, 100mA Operating Temperature: 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: TO-243AA Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
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2SA1812T100Q | Hersteller : Rohm Semiconductor |
Description: TRANS PNP 400V 0.5A MPT3 Power - Max: 500 mW Voltage - Collector Emitter Breakdown (Max): 400 V Current - Collector (Ic) (Max): 500 mA Part Status: Obsolete Supplier Device Package: MPT3 Frequency - Transition: 12MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 50mA, 5V Current - Collector Cutoff (Max): 1µA (ICBO) Vce Saturation (Max) @ Ib, Ic: 1V @ 10mA, 100mA Operating Temperature: 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: TO-243AA Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |