Produkte > TOSHIBA SEMICONDUCTOR AND STORAGE > 2SA1873-Y(TE85L,F)
2SA1873-Y(TE85L,F)

2SA1873-Y(TE85L,F) Toshiba Semiconductor and Storage

2SA1873-%28G%2CY%29.pdf Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP 50V 150MA USV
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual) Matched Pair, Common Emitter
Operating Temperature: 125°C (TJ)
Power - Max: 200mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: USV
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.11 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details 2SA1873-Y(TE85L,F) Toshiba Semiconductor and Storage

Description: TRANS 2PNP 50V 150MA USV, Packaging: Tape & Reel (TR), Package / Case: 5-TSSOP, SC-70-5, SOT-353, Mounting Type: Surface Mount, Transistor Type: 2 PNP (Dual) Matched Pair, Common Emitter, Operating Temperature: 125°C (TJ), Power - Max: 200mW, Current - Collector (Ic) (Max): 150mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V, Frequency - Transition: 80MHz, Supplier Device Package: USV, Part Status: Active.

Weitere Produktangebote 2SA1873-Y(TE85L,F) nach Preis ab 0.13 EUR bis 0.53 EUR

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2SA1873-Y(TE85L,F) 2SA1873-Y(TE85L,F) Hersteller : Toshiba Semiconductor and Storage 2SA1873-%28G%2CY%29.pdf Description: TRANS 2PNP 50V 150MA USV
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual) Matched Pair, Common Emitter
Operating Temperature: 125°C (TJ)
Power - Max: 200mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: USV
Part Status: Active
auf Bestellung 5928 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
34+0.53 EUR
56+0.32 EUR
100+0.20 EUR
500+0.15 EUR
1000+0.13 EUR
Mindestbestellmenge: 34
Im Einkaufswagen  Stück im Wert von  UAH
2SA1873-Y(TE85L,F) 2SA1873-Y(TE85L,F) Hersteller : Toshiba 2SA1873-%28G%2CY%29.pdf Bipolar Transistors - BJT -150mA -50V
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