Technische Details 2SA1887F TOSHIBA
Description: TRANS PNP 50V 10A TO220NIS, Power - Max: 2 W, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 10 A, Supplier Device Package: TO-220NIS, Frequency - Transition: 45MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 1V, Current - Collector Cutoff (Max): 1µA (ICBO), Vce Saturation (Max) @ Ib, Ic: 400mV @ 250mA, 5A, Operating Temperature: 150°C (TJ), Transistor Type: PNP, Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Tube.
Weitere Produktangebote 2SA1887F
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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2SA1887(F) | Toshiba Semiconductor and Storage |
 Description: TRANS PNP 50V 10A TO220NISPower - Max: 2 W Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 10 A Supplier Device Package: TO-220NIS Frequency - Transition: 45MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 1V Current - Collector Cutoff (Max): 1µA (ICBO) Vce Saturation (Max) @ Ib, Ic: 400mV @ 250mA, 5A Operating Temperature: 150°C (TJ) Transistor Type: PNP Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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2SA1887 (F) | Toshiba | Bipolar Transistors - BJT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| 2SA1887(F) |
|
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 10A TO220NIS
Power - Max: 2 W
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 10 A
Supplier Device Package: TO-220NIS
Frequency - Transition: 45MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 1V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 250mA, 5A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Description: TRANS PNP 50V 10A TO220NIS
Power - Max: 2 W
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 10 A
Supplier Device Package: TO-220NIS
Frequency - Transition: 45MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 1V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 250mA, 5A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2SA1887 (F) |
Hersteller: Toshiba
Bipolar Transistors - BJT
Bipolar Transistors - BJT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH