Technische Details 2SA1952TLQ Rohm Semiconductor
Description: TRANS PNP 60V 5A CPT3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 4A, Current - Collector Cutoff (Max): 10µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 2V, Frequency - Transition: 80MHz, Supplier Device Package: CPT3, Part Status: Not For New Designs, Current - Collector (Ic) (Max): 5 A, Voltage - Collector Emitter Breakdown (Max): 60 V, Power - Max: 1 W.
Weitere Produktangebote 2SA1952TLQ nach Preis ab 3.19 EUR bis 3.19 EUR
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2SA1952TLQ | Hersteller : Rohm Semiconductor |
 Trans GP BJT PNP 60V 5A 1000mW 3-Pin(2+Tab) CPT T/R |
auf Bestellung 2300 Stücke: Lieferzeit 14-21 Tag (e) |
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2SA1952TLQ | Hersteller : Rohm Semiconductor |
Trans GP BJT PNP 60V 5A 1000mW 3-Pin(2+Tab) CPT T/R |
auf Bestellung 49 Stücke: Lieferzeit 14-21 Tag (e) |
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| 2SA1952TLQ | Hersteller : ROHM |
1020+ TO252 |
auf Bestellung 2500 Stücke: Lieferzeit 21-28 Tag (e) |
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2SA1952TLQ | Hersteller : Rohm Semiconductor |
Description: TRANS PNP 60V 5A CPT3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 4A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 2V Frequency - Transition: 80MHz Supplier Device Package: CPT3 Part Status: Not For New Designs Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 1 W |
Produkt ist nicht verfügbar |
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2SA1952TLQ | Hersteller : Rohm Semiconductor |
Description: TRANS PNP 60V 5A CPT3 Power - Max: 1 W Voltage - Collector Emitter Breakdown (Max): 60 V Current - Collector (Ic) (Max): 5 A Part Status: Not For New Designs Supplier Device Package: CPT3 Frequency - Transition: 80MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 2V Current - Collector Cutoff (Max): 10µA (ICBO) Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 4A Operating Temperature: 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
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| 2SA1952TLQ | Hersteller : ROHM Semiconductor |
Bipolar Transistors - BJT PNP 60V 5A |
Produkt ist nicht verfügbar |