2SA1954BTE85LF Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 12V 0.5A SC-70
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 12 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: SC-70
Frequency - Transition: 130MHz
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA
Operating Temperature: 125°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 10mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
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Technische Details 2SA1954BTE85LF Toshiba Semiconductor and Storage
Description: TRANS PNP 12V 0.5A SC-70, Power - Max: 100 mW, Voltage - Collector Emitter Breakdown (Max): 12 V, Frequency - Transition: 130MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 10mA, 2V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA, Operating Temperature: 125°C (TJ), Transistor Type: PNP, Mounting Type: Surface Mount, Package / Case: SC-70, SOT-323, Packaging: Tape & Reel (TR), Current - Collector (Ic) (Max): 500 mA, Supplier Device Package: SC-70.
Weitere Produktangebote 2SA1954BTE85LF
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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2SA1954BTE85LF | Toshiba Semiconductor and Storage |
Description: TRANS PNP 12V 0.5A SC-70 Power - Max: 100 mW Voltage - Collector Emitter Breakdown (Max): 12 V Frequency - Transition: 130MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 10mA, 2V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA Operating Temperature: 125°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Tape & Reel (TR) Current - Collector (Ic) (Max): 500 mA Supplier Device Package: SC-70 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
2SA1954BTE85LF | Toshiba | Bipolar Transistors - BJT PNP Trans -0.5A LN -12V VCEO |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| 2SA1954BTE85LF |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 12V 0.5A SC-70
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 12 V
Frequency - Transition: 130MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 10mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA
Operating Temperature: 125°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: SC-70
Description: TRANS PNP 12V 0.5A SC-70
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 12 V
Frequency - Transition: 130MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 10mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA
Operating Temperature: 125°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: SC-70
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2SA1954BTE85LF |
Hersteller: Toshiba
Bipolar Transistors - BJT PNP Trans -0.5A LN -12V VCEO
Bipolar Transistors - BJT PNP Trans -0.5A LN -12V VCEO
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH