Produkte > TOSHIBA SEMICONDUCTOR AND STORAGE > 2SA1955FVATPL3Z
2SA1955FVATPL3Z

2SA1955FVATPL3Z Toshiba Semiconductor and Storage

2SA1955FV.pdf Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 12V 0.4A CST3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: CST3
Part Status: Obsolete
Current - Collector (Ic) (Max): 400 mA
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 100 mW
auf Bestellung 2272 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
56+0.32 EUR
85+0.21 EUR
121+0.15 EUR
500+0.12 EUR
1000+0.11 EUR
Mindestbestellmenge: 56
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details 2SA1955FVATPL3Z Toshiba Semiconductor and Storage

Description: TRANS PNP 12V 0.4A CST3, Packaging: Tape & Reel (TR), Package / Case: SC-101, SOT-883, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V, Frequency - Transition: 130MHz, Supplier Device Package: CST3, Part Status: Obsolete, Current - Collector (Ic) (Max): 400 mA, Voltage - Collector Emitter Breakdown (Max): 12 V, Power - Max: 100 mW.

Weitere Produktangebote 2SA1955FVATPL3Z

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
2SA1955FVATPL3Z 2SA1955FVATPL3Z Hersteller : Toshiba Semiconductor and Storage 2SA1955FV.pdf Description: TRANS PNP 12V 0.4A CST3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: CST3
Part Status: Obsolete
Current - Collector (Ic) (Max): 400 mA
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 100 mW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2SA1955FVATPL3Z 2SA1955FVATPL3Z Hersteller : Toshiba 2SA1955FV.pdf Bipolar Transistors - BJT PNP Trans -0.4A LN -12V VCEO
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH