2SA1955FVATPL3Z Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 12V 0.4A CST3
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 12 V
Current - Collector (Ic) (Max): 400 mA
Part Status: Obsolete
Supplier Device Package: CST3
Frequency - Transition: 130MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Packaging: Cut Tape (CT)
| Anzahl | Preis |
|---|---|
| 56+ | 0.32 EUR |
| 87+ | 0.2 EUR |
| 124+ | 0.14 EUR |
| 500+ | 0.12 EUR |
| 1000+ | 0.11 EUR |
| 2000+ | 0.1 EUR |
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Technische Details 2SA1955FVATPL3Z Toshiba Semiconductor and Storage
Description: TRANS PNP 12V 0.4A CST3, Current - Collector (Ic) (Max): 400 mA, Power - Max: 100 mW, Voltage - Collector Emitter Breakdown (Max): 12 V, Part Status: Obsolete, Supplier Device Package: CST3, Frequency - Transition: 130MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA, Operating Temperature: 150°C (TJ), Transistor Type: PNP, Mounting Type: Surface Mount, Package / Case: SC-101, SOT-883, Packaging: Tape & Reel (TR).
Weitere Produktangebote 2SA1955FVATPL3Z
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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2SA1955FVATPL3Z | Toshiba Semiconductor and Storage |
Description: TRANS PNP 12V 0.4A CST3 Current - Collector (Ic) (Max): 400 mA Power - Max: 100 mW Voltage - Collector Emitter Breakdown (Max): 12 V Part Status: Obsolete Supplier Device Package: CST3 Frequency - Transition: 130MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA Operating Temperature: 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: SC-101, SOT-883 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
2SA1955FVATPL3Z | Toshiba |
Bipolar Transistors - BJT PNP Trans -0.4A LN -12V VCEO |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH |
| 2SA1955FVATPL3Z |
|
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 12V 0.4A CST3
Current - Collector (Ic) (Max): 400 mA
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 12 V
Part Status: Obsolete
Supplier Device Package: CST3
Frequency - Transition: 130MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Packaging: Tape & Reel (TR)
Description: TRANS PNP 12V 0.4A CST3
Current - Collector (Ic) (Max): 400 mA
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 12 V
Part Status: Obsolete
Supplier Device Package: CST3
Frequency - Transition: 130MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2SA1955FVATPL3Z |
|
Hersteller: Toshiba
Bipolar Transistors - BJT PNP Trans -0.4A LN -12V VCEO
Bipolar Transistors - BJT PNP Trans -0.4A LN -12V VCEO
Produkt ist nicht verfügbar
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen
Stück im Wert von UAH