2SA1955FVBTPL3Z Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 12V 0.4A VESM
Frequency - Transition: 130MHz
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 12 V
Current - Collector (Ic) (Max): 400 mA
Part Status: Obsolete
Supplier Device Package: VESM
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Cut Tape (CT)
| Anzahl | Preis |
|---|---|
| 67+ | 0.26 EUR |
| 83+ | 0.21 EUR |
| 100+ | 0.18 EUR |
| 500+ | 0.16 EUR |
| 1000+ | 0.15 EUR |
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Technische Details 2SA1955FVBTPL3Z Toshiba Semiconductor and Storage
Description: TRANS PNP 12V 0.4A VESM, Packaging: Tape & Reel (TR), Package / Case: SOT-723, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V, Frequency - Transition: 130MHz, Supplier Device Package: VESM, Part Status: Obsolete, Current - Collector (Ic) (Max): 400 mA, Voltage - Collector Emitter Breakdown (Max): 12 V, Power - Max: 100 mW.
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2SA1955FVBTPL3Z | Toshiba |
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Hersteller: Toshiba
Bipolar Transistors - BJT PNP Trans -0.4A LN -12V VCEO
Bipolar Transistors - BJT PNP Trans -0.4A LN -12V VCEO
auf Bestellung 16000 Stücke:
Lieferzeit 10-14 Tag (e)