2SA1987-O(Q) Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and StorageDescription: TRANS PNP 230V 15A TO-3P
Packaging: Bulk
Package / Case: TO-3PL
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
Current - Collector Cutoff (Max): 5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-3P(L)
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 230 V
Power - Max: 180 W
auf Bestellung 25 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 6.71 EUR |
| 10+ | 4.43 EUR |
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Technische Details 2SA1987-O(Q) Toshiba Semiconductor and Storage
Description: TRANS PNP 230V 15A TO-3P, Packaging: Bulk, Package / Case: TO-3PL, Mounting Type: Through Hole, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A, Current - Collector Cutoff (Max): 5µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V, Frequency - Transition: 30MHz, Supplier Device Package: TO-3P(L), Part Status: Active, Current - Collector (Ic) (Max): 15 A, Voltage - Collector Emitter Breakdown (Max): 230 V, Power - Max: 180 W.
Weitere Produktangebote 2SA1987-O(Q) nach Preis ab 2.75 EUR bis 6.78 EUR
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2SA1987-O(Q) | Hersteller : Toshiba |
Bipolar Transistors - BJT Pb-F POWER TRANSISTOR TO-3PL V=230 PD=180W F=30MHZ |
auf Bestellung 399 Stücke: Lieferzeit 10-14 Tag (e) |
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2SA1987-O(Q) | Hersteller : Toshiba |
Trans GP BJT PNP 230V 15A 180000mW 3-Pin(3+Tab) TO-3PL Tray |
Produkt ist nicht verfügbar |
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2SA1987-O(Q) | Hersteller : Toshiba |
Trans GP BJT PNP 230V 15A 180000mW 3-Pin(3+Tab) TO-3PL Tray |
Produkt ist nicht verfügbar |