2SA2018TL Rohm Semiconductor
auf Bestellung 46695 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 1802+ | 0.08 EUR |
| 2029+ | 0.07 EUR |
| 2146+ | 0.06 EUR |
| 3000+ | 0.06 EUR |
| 12000+ | 0.05 EUR |
| 24000+ | 0.05 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details 2SA2018TL Rohm Semiconductor
Description: TRANS PNP 12V 0.5A EMT3, Packaging: Tape & Reel (TR), Package / Case: SC-75, SOT-416, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 10mA, 2V, Frequency - Transition: 260MHz, Supplier Device Package: EMT3, Part Status: Active, Current - Collector (Ic) (Max): 500 mA, Voltage - Collector Emitter Breakdown (Max): 12 V, Power - Max: 150 mW.
Weitere Produktangebote 2SA2018TL nach Preis ab 0.15 EUR bis 0.92 EUR
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2SA2018TL | Hersteller : Rohm Semiconductor |
 Trans GP BJT PNP 12V 0.5A 150mW 3-Pin EMT T/R |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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2SA2018TL | Hersteller : Rohm Semiconductor |
Description: TRANS PNP 12V 0.5A EMT3 Packaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 10mA, 2V Frequency - Transition: 260MHz Supplier Device Package: EMT3 Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 12 V Power - Max: 150 mW |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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2SA2018TL | Hersteller : Rohm Semiconductor |
Trans GP BJT PNP 12V 0.5A 150mW 3-Pin EMT T/R |
auf Bestellung 9000 Stücke: Lieferzeit 14-21 Tag (e) |
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2SA2018TL | Hersteller : Rohm Semiconductor |
Description: TRANS PNP 12V 0.5A EMT3 Packaging: Cut Tape (CT) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 10mA, 2V Frequency - Transition: 260MHz Supplier Device Package: EMT3 Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 12 V Power - Max: 150 mW |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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2SA2018TL | Hersteller : ROHM Semiconductor |
Bipolar Transistors - BJT PNP 12V 0.5A |
auf Bestellung 2399 Stücke: Lieferzeit 10-14 Tag (e) |
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2SA2018TL | Hersteller : Rohm Semiconductor |
Trans GP BJT PNP 12V 0.5A 150mW 3-Pin EMT T/R |
auf Bestellung 415 Stücke: Lieferzeit 14-21 Tag (e) |
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2SA2018TL | Hersteller : ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 12V; 0.5A; 150mW; SC75A,SOT416 Mounting: SMD Case: SC75A; SOT416 Kind of package: reel; tape Collector-emitter voltage: 12V Current gain: 270...680 Collector current: 0.5A Type of transistor: PNP Power dissipation: 0.15W Polarisation: bipolar Frequency: 260MHz Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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+1 |
2SA2018TL | Hersteller : ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 12V; 0.5A; 150mW; SC75A,SOT416 Mounting: SMD Case: SC75A; SOT416 Kind of package: reel; tape Collector-emitter voltage: 12V Current gain: 270...680 Collector current: 0.5A Type of transistor: PNP Power dissipation: 0.15W Polarisation: bipolar Frequency: 260MHz |
Produkt ist nicht verfügbar |