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2SA2126-S-TL-E

2SA2126-S-TL-E onsemi

en7990-d.pdf Hersteller: onsemi
Description: TRANS PNP 50V 3A TPFA
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 520mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 390MHz
Supplier Device Package: TP-FA
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 800 mW
auf Bestellung 33600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
897+0.55 EUR
Mindestbestellmenge: 897
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Technische Details 2SA2126-S-TL-E onsemi

Description: TRANS PNP 50V 3A TPFA, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 520mV @ 100mA, 2A, Current - Collector Cutoff (Max): 1µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V, Frequency - Transition: 390MHz, Supplier Device Package: TP-FA, Part Status: Obsolete, Current - Collector (Ic) (Max): 3 A, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 800 mW.

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2SA2126-S-TL-E Hersteller : ON Semiconductor EN7990-D-310464.pdf Bipolar Transistors - BJT BIP PNP 3A 50V
auf Bestellung 4900 Stücke:
Lieferzeit 10-14 Tag (e)
2SA2126-S-TL-E Hersteller : ONSEMI ONSMS36394-1.pdf?t.download=true&u=5oefqw Description: ONSEMI - 2SA2126-S-TL-E - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT
tariffCode: 85412900
productTraceability: No
rohsCompliant: NO
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: NO
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 33600 Stücke:
Lieferzeit 14-21 Tag (e)
2SA2126-S-TL-E 2SA2126-S-TL-E Hersteller : onsemi en7990-d.pdf Description: TRANS PNP 50V 3A TPFA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 520mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 390MHz
Supplier Device Package: TP-FA
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 800 mW
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