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2SA2127 onsemi

ONSMS36423-1.pdf?t.download=true&u=ovmfp3
Hersteller: onsemi
Description: TRANS PNP 50V 2A 3-MP
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 420MHz
Supplier Device Package: 3-MP
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
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Lieferzeit 10-14 Tag (e)
Anzahl Preis
1285+0.37 EUR
Mindestbestellmenge: 1285
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Technische Details 2SA2127 onsemi

Description: TRANS PNP 50V 2A 3-MP, Packaging: Bulk, Package / Case: TO-226-3, TO-92-3 Long Body, Mounting Type: Through Hole, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A, Current - Collector Cutoff (Max): 1µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V, Frequency - Transition: 420MHz, Supplier Device Package: 3-MP, Part Status: Active, Current - Collector (Ic) (Max): 2 A, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 1 W.

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2SA2127 2SA2127 onsemi 2SA2127.pdf Description: TRANS PNP 50V 2A 3-MP
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 420MHz
Supplier Device Package: 3-MP
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2SA2127 onsemi EN8022_D-117556.pdf Bipolar Transistors - BJT BIP PNP 2A 50V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2SA2127 2SA2127.pdf
2SA2127
Hersteller: onsemi
Description: TRANS PNP 50V 2A 3-MP
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 420MHz
Supplier Device Package: 3-MP
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2SA2127 EN8022_D-117556.pdf
Hersteller: onsemi
Bipolar Transistors - BJT BIP PNP 2A 50V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH