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Technische Details 2SA2169-E onsemi
Description: TRANS PNP 50V 10A TP, Power - Max: 950 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 10 A, Supplier Device Package: TP, Frequency - Transition: 130MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V, Current - Collector Cutoff (Max): 10µA (ICBO), Vce Saturation (Max) @ Ib, Ic: 580mV @ 250mA, 5A, Operating Temperature: 150°C (TJ), Transistor Type: PNP, Mounting Type: Through Hole, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Packaging: Bulk.
Weitere Produktangebote 2SA2169-E
| Foto | Bezeichnung | Hersteller | Beschreibung |
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2SA2169-E | Hersteller : onsemi |
 Description: TRANS PNP 50V 10A TPPower - Max: 950 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 10 A Supplier Device Package: TP Frequency - Transition: 130MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V Current - Collector Cutoff (Max): 10µA (ICBO) Vce Saturation (Max) @ Ib, Ic: 580mV @ 250mA, 5A Operating Temperature: 150°C (TJ) Transistor Type: PNP Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Packaging: Bulk |
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