2SA2215,LF Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and StorageDescription: TRANS PNP 20V 2.5A UFM
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 190mV @ 53mA, 1.6A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Supplier Device Package: UFM
Current - Collector (Ic) (Max): 2.5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 500 mW
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.21 EUR |
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Technische Details 2SA2215,LF Toshiba Semiconductor and Storage
Description: TRANS PNP 20V 2.5A UFM, Packaging: Tape & Reel (TR), Package / Case: 3-SMD, Flat Leads, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 190mV @ 53mA, 1.6A, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V, Supplier Device Package: UFM, Current - Collector (Ic) (Max): 2.5 A, Voltage - Collector Emitter Breakdown (Max): 20 V, Power - Max: 500 mW.
Weitere Produktangebote 2SA2215,LF nach Preis ab 0.19 EUR bis 0.94 EUR
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2SA2215,LF | Hersteller : Toshiba Semiconductor and Storage |
Description: TRANS PNP 20V 2.5A UFM Packaging: Cut Tape (CT) Package / Case: 3-SMD, Flat Leads Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 190mV @ 53mA, 1.6A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V Supplier Device Package: UFM Current - Collector (Ic) (Max): 2.5 A Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 500 mW |
auf Bestellung 5290 Stücke: Lieferzeit 10-14 Tag (e) |
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2SA2215,LF | Hersteller : Toshiba |
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Produkt ist nicht verfügbar |