2SA673BTZ-E Renesas
Hersteller: Renesas
Description: 2SA673 - Bipolar Power Transisto
Part Status: Obsolete
Supplier Device Package: TO-92
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 3V
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 15mA, 150mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Bulk
Produktrezensionen
Produktbewertung abgeben
Technische Details 2SA673BTZ-E Renesas
Description: 2SA673 - Bipolar Power Transisto, Part Status: Obsolete, Supplier Device Package: TO-92, DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 3V, Current - Collector Cutoff (Max): 500nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 600mV @ 15mA, 150mA, Operating Temperature: 150°C (TJ), Transistor Type: PNP, Mounting Type: Through Hole, Package / Case: TO-226-3, TO-92-3 (TO-226AA), Packaging: Bulk.