Produkte > RENESAS ELECTRONICS CORPORATION > 2SA812A-T1B-AT
2SA812A-T1B-AT

2SA812A-T1B-AT Renesas Electronics Corporation

RNCCS04580-1.pdf?t.download=true&u=5oefqw Hersteller: Renesas Electronics Corporation
Description: SMALL SIGNAL BIPOLAR TRANS PNP
Packaging: Bulk
Part Status: Active
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 1mA, 6V
Frequency - Transition: 180MHz
Supplier Device Package: SC-59
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
auf Bestellung 9378170 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3245+0.15 EUR
Mindestbestellmenge: 3245
Produktrezensionen
Produktbewertung abgeben

Technische Details 2SA812A-T1B-AT Renesas Electronics Corporation

Description: SMALL SIGNAL BIPOLAR TRANS PNP, Packaging: Bulk, Part Status: Active, Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 1mA, 6V, Frequency - Transition: 180MHz, Supplier Device Package: SC-59, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 200 mW.

Weitere Produktangebote 2SA812A-T1B-AT

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
2SA812A-T1B-AT Hersteller : NEC RNCCS04580-1.pdf?t.download=true&u=5oefqw SOT-23 09+
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)