2SAR293P5T100 Rohm Semiconductor
| Anzahl | Privatkunde |
|---|---|
| 864+ | 0.2 EUR |
| 1011+ | 0.17 EUR |
| 1065+ | 0.15 EUR |
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Produktbewertung abgeben
Technische Details 2SAR293P5T100 Rohm Semiconductor
Description: TRANS PNP 30V 1A MPT3, Transistor Type: PNP, Mounting Type: Surface Mount, Package / Case: TO-243AA, Packaging: Tape & Reel (TR), Power - Max: 500 mW, Voltage - Collector Emitter Breakdown (Max): 30 V, Current - Collector (Ic) (Max): 1 A, Part Status: Active, Supplier Device Package: MPT3, Frequency - Transition: 320MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 350mV @ 25mA, 500mA, Operating Temperature: 150°C (TJ).
Weitere Produktangebote 2SAR293P5T100 nach Preis ab 0.17 EUR bis 1.04 EUR
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2SAR293P5T100 | Rohm Semiconductor |
 Trans GP BJT PNP 30V 1A 2000mW 4-Pin(3+Tab) MPT T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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2SAR293P5T100 | ROHM Semiconductor |
Bipolar Transistors - BJT PNP -30V Vceo -1A Ic MPT3 |
auf Bestellung 1998 Stücke: Lieferzeit 10-14 Tag (e) |
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2SAR293P5T100 | Rohm Semiconductor |
Description: TRANS PNP 30V 1A MPT3 Supplier Device Package: MPT3 Frequency - Transition: 320MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 350mV @ 25mA, 500mA Operating Temperature: 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: TO-243AA Packaging: Cut Tape (CT) Power - Max: 500 mW Voltage - Collector Emitter Breakdown (Max): 30 V Current - Collector (Ic) (Max): 1 A Part Status: Active |
auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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2SAR293P5T100 | Rohm Semiconductor |
Trans GP BJT PNP 30V 1A 2000mW 4-Pin(3+Tab) MPT T/R |
auf Bestellung 527 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| 2SAR293P5T100 |
|
Hersteller: Rohm Semiconductor
Trans GP BJT PNP 30V 1A 2000mW 4-Pin(3+Tab) MPT T/R
Trans GP BJT PNP 30V 1A 2000mW 4-Pin(3+Tab) MPT T/R
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 329+ | 0.54 EUR |
| 500+ | 0.51 EUR |
| 1000+ | 0.48 EUR |
| 2500+ | 0.45 EUR |
| 2SAR293P5T100 |
|
Hersteller: ROHM Semiconductor
Bipolar Transistors - BJT PNP -30V Vceo -1A Ic MPT3
Bipolar Transistors - BJT PNP -30V Vceo -1A Ic MPT3
auf Bestellung 1998 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 1.04 EUR |
| 10+ | 0.64 EUR |
| 100+ | 0.31 EUR |
| 1000+ | 0.29 EUR |
| 2000+ | 0.21 EUR |
| 10000+ | 0.18 EUR |
| 25000+ | 0.17 EUR |
| 2SAR293P5T100 |
|
Hersteller: Rohm Semiconductor
Description: TRANS PNP 30V 1A MPT3
Supplier Device Package: MPT3
Frequency - Transition: 320MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 25mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Description: TRANS PNP 30V 1A MPT3
Supplier Device Package: MPT3
Frequency - Transition: 320MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 25mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
| 2SAR293P5T100 |
|
Hersteller: Rohm Semiconductor
Trans GP BJT PNP 30V 1A 2000mW 4-Pin(3+Tab) MPT T/R
Trans GP BJT PNP 30V 1A 2000mW 4-Pin(3+Tab) MPT T/R
auf Bestellung 527 Stücke:
Lieferzeit 14-21 Tag (e)