2SAR514P5T100 Rohm Semiconductor
auf Bestellung 1256 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 1086+ | 0.14 EUR |
| 1124+ | 0.13 EUR |
| 1139+ | 0.12 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details 2SAR514P5T100 Rohm Semiconductor
Description: TRANS PNP 80V 0.7A MPT3, Packaging: Tape & Reel (TR), Package / Case: TO-243AA, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 300mA, Current - Collector Cutoff (Max): 1µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V, Frequency - Transition: 380MHz, Supplier Device Package: MPT3, Current - Collector (Ic) (Max): 700 mA, Voltage - Collector Emitter Breakdown (Max): 80 V, Power - Max: 500 mW.
Weitere Produktangebote 2SAR514P5T100 nach Preis ab 0.20 EUR bis 0.67 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
2SAR514P5T100 | Hersteller : Rohm Semiconductor |
 Description: TRANS PNP 80V 0.7A MPT3Packaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 300mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V Frequency - Transition: 380MHz Supplier Device Package: MPT3 Current - Collector (Ic) (Max): 700 mA Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 500 mW |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
|
2SAR514P5T100 | Hersteller : Rohm Semiconductor |
Trans GP BJT PNP 80V 0.7A 2000mW 4-Pin(3+Tab) MPT T/R |
auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
|
|
2SAR514P5T100 | Hersteller : Rohm Semiconductor |
Description: TRANS PNP 80V 0.7A MPT3 Packaging: Cut Tape (CT) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 300mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V Frequency - Transition: 380MHz Supplier Device Package: MPT3 Current - Collector (Ic) (Max): 700 mA Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 500 mW |
auf Bestellung 1171 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
 |
2SAR514P5T100 | Hersteller : ROHM Semiconductor |
Bipolar Transistors - BJT PNP -80V Vceo -0.7A Ic MPT3 |
auf Bestellung 792 Stücke: Lieferzeit 10-14 Tag (e) |
|