2SAR563F3TR Rohm Semiconductor
Hersteller: Rohm Semiconductor
Description: TRANS PNP 50V 6A HUML2020L3
Packaging: Tape & Reel (TR)
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 6 A
Part Status: Active
Supplier Device Package: HUML2020L3
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 500mA, 3V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 150mA, 3A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: 3-UDFN Exposed Pad
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Technische Details 2SAR563F3TR Rohm Semiconductor
Description: TRANS PNP 50V 6A HUML2020L3, Packaging: Tape & Reel (TR), Power - Max: 1 W, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 6 A, Part Status: Active, Supplier Device Package: HUML2020L3, Frequency - Transition: 200MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 500mA, 3V, Current - Collector Cutoff (Max): 1µA (ICBO), Vce Saturation (Max) @ Ib, Ic: 400mV @ 150mA, 3A, Operating Temperature: 150°C (TJ), Transistor Type: PNP, Mounting Type: Surface Mount, Package / Case: 3-UDFN Exposed Pad.
Weitere Produktangebote 2SAR563F3TR nach Preis ab 0.62 EUR bis 2.78 EUR
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2SAR563F3TR | ROHM Semiconductor |
Bipolar Transistors - BJT Small and Excellent Thermal Conductivity, PNP -6A -50V Middle Power Transistor |
auf Bestellung 4870 Stücke: Lieferzeit 10-14 Tag (e) |
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2SAR563F3TR | Rohm Semiconductor |
Description: TRANS PNP 50V 6A HUML2020L3 Power - Max: 1 W Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 6 A Part Status: Active Supplier Device Package: HUML2020L3 Frequency - Transition: 200MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 500mA, 3V Current - Collector Cutoff (Max): 1µA (ICBO) Vce Saturation (Max) @ Ib, Ic: 400mV @ 150mA, 3A Operating Temperature: 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: 3-UDFN Exposed Pad Packaging: Cut Tape (CT) |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| 2SAR563F3TR |
|
Hersteller: ROHM Semiconductor
Bipolar Transistors - BJT Small and Excellent Thermal Conductivity, PNP -6A -50V Middle Power Transistor
Bipolar Transistors - BJT Small and Excellent Thermal Conductivity, PNP -6A -50V Middle Power Transistor
auf Bestellung 4870 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.48 EUR |
| 10+ | 1.49 EUR |
| 100+ | 1.06 EUR |
| 500+ | 0.84 EUR |
| 1000+ | 0.76 EUR |
| 3000+ | 0.67 EUR |
| 6000+ | 0.62 EUR |
| 2SAR563F3TR |
|
Hersteller: Rohm Semiconductor
Description: TRANS PNP 50V 6A HUML2020L3
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 6 A
Part Status: Active
Supplier Device Package: HUML2020L3
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 500mA, 3V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 150mA, 3A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: 3-UDFN Exposed Pad
Packaging: Cut Tape (CT)
Description: TRANS PNP 50V 6A HUML2020L3
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 6 A
Part Status: Active
Supplier Device Package: HUML2020L3
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 500mA, 3V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 150mA, 3A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: 3-UDFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 2.78 EUR |
| 12+ | 1.75 EUR |
| 100+ | 1.17 EUR |
| 500+ | 0.92 EUR |
| 1000+ | 0.83 EUR |