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2SARA41CHZGT116R

2SARA41CHZGT116R ROHM Semiconductor


2sa1579u3t106r-e.pdf
Hersteller: ROHM Semiconductor
Bipolar Transistors - BJT High-voltage Amplifier Transistor (-120V, -50mA) (AEC-Q101 Qualified)
auf Bestellung 4841 Stücke:

Lieferzeit 10-14 Tag (e)
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3+1.06 EUR
10+0.65 EUR
100+0.42 EUR
500+0.32 EUR
1000+0.26 EUR
3000+0.23 EUR
6000+0.2 EUR
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Technische Details 2SARA41CHZGT116R ROHM Semiconductor

Description: TRANS PNP 120V 0.05A SST3, Power - Max: 200 mW, Voltage - Collector Emitter Breakdown (Max): 120 V, Current - Collector (Ic) (Max): 50 mA, Part Status: Active, Supplier Device Package: SST3, Frequency - Transition: 140MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 6V, Current - Collector Cutoff (Max): 500nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA, Operating Temperature: 150°C (TJ), Transistor Type: PNP, Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).

Weitere Produktangebote 2SARA41CHZGT116R nach Preis ab 0.29 EUR bis 1.06 EUR

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2SARA41CHZGT116R 2SARA41CHZGT116R Rohm Semiconductor 2sa1579u3t106r-e.pdf Description: TRANS PNP 120V 0.05A SST3
Voltage - Collector Emitter Breakdown (Max): 120 V
Current - Collector (Ic) (Max): 50 mA
Part Status: Active
Supplier Device Package: SST3
Frequency - Transition: 140MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 6V
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Power - Max: 200 mW
auf Bestellung 1780 Stücke:
Lieferzeit 10-14 Tag (e)
17+1.06 EUR
27+0.66 EUR
100+0.42 EUR
500+0.32 EUR
1000+0.29 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
2SARA41CHZGT116R 2sa1579u3t106r-e.pdf
2SARA41CHZGT116R
Hersteller: Rohm Semiconductor
Description: TRANS PNP 120V 0.05A SST3
Voltage - Collector Emitter Breakdown (Max): 120 V
Current - Collector (Ic) (Max): 50 mA
Part Status: Active
Supplier Device Package: SST3
Frequency - Transition: 140MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 6V
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Power - Max: 200 mW
auf Bestellung 1780 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
17+1.06 EUR
27+0.66 EUR
100+0.42 EUR
500+0.32 EUR
1000+0.29 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH