2SB1117-AZ Renesas Electronics Corporation
Hersteller: Renesas Electronics Corporation
Description: SMALL SIGNAL BIPOLAR TRANS PNP
Packaging: Bulk
Part Status: Active
Package / Case: 3-SSIP
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 280MHz
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 1 W
DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 1A, 2V
Description: SMALL SIGNAL BIPOLAR TRANS PNP
Packaging: Bulk
Part Status: Active
Package / Case: 3-SSIP
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 280MHz
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 1 W
DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 1A, 2V
auf Bestellung 2794 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
773+ | 0.64 EUR |
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Technische Details 2SB1117-AZ Renesas Electronics Corporation
Description: SMALL SIGNAL BIPOLAR TRANS PNP, Packaging: Bulk, Part Status: Active, Package / Case: 3-SSIP, Mounting Type: Through Hole, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 500mV @ 300mA, 3A, Current - Collector Cutoff (Max): 100nA (ICBO), Frequency - Transition: 280MHz, Current - Collector (Ic) (Max): 3 A, Voltage - Collector Emitter Breakdown (Max): 25 V, Power - Max: 1 W, DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 1A, 2V.
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Foto | Bezeichnung | Hersteller | Beschreibung |
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2SB1117-AZ | Hersteller : Renesas Electronics | Renesas Electronics |
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