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2SB1121T-TD-E onsemi
Hersteller: onsemi
Description: TRANS PNP 25V 2A PCP
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 75mA, 1.5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: PCP
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 500 mW
| Anzahl | Preis |
|---|---|
| 20+ | 0.9 EUR |
| 23+ | 0.77 EUR |
| 100+ | 0.54 EUR |
| 500+ | 0.42 EUR |
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Technische Details 2SB1121T-TD-E onsemi
Description: TRANS PNP 25V 2A PCP, Packaging: Cut Tape (CT), Package / Case: TO-243AA, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 600mV @ 75mA, 1.5A, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 2V, Frequency - Transition: 150MHz, Supplier Device Package: PCP, Part Status: Obsolete, Current - Collector (Ic) (Max): 2 A, Voltage - Collector Emitter Breakdown (Max): 25 V, Power - Max: 500 mW.
Weitere Produktangebote 2SB1121T-TD-E
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| 2SB1121T-TD-E | ON Semiconductor |
Bipolar Transistors - BJT BIP PNP 2A 25V |
auf Bestellung 4595 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| 2SB1121T-TD-E |
|
Hersteller: ON Semiconductor
Bipolar Transistors - BJT BIP PNP 2A 25V
Bipolar Transistors - BJT BIP PNP 2A 25V
auf Bestellung 4595 Stücke:
Lieferzeit 10-14 Tag (e)