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2SB1131S-AE onsemi

SNYOS08341-1.pdf?t.download=true&u=5oefqw Hersteller: onsemi
Description: BIP PNP 5A 20V
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 60mA, 3A
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 500mA, 2V
Frequency - Transition: 320MHz
Supplier Device Package: 3-MP
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 1 W
auf Bestellung 12000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1902+0.38 EUR
Mindestbestellmenge: 1902
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Technische Details 2SB1131S-AE onsemi

Description: BIP PNP 5A 20V, Packaging: Bulk, Package / Case: TO-226-3, TO-92-3 Long Body, Mounting Type: Through Hole, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 500mV @ 60mA, 3A, Current - Collector Cutoff (Max): 500nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 500mA, 2V, Frequency - Transition: 320MHz, Supplier Device Package: 3-MP, Current - Collector (Ic) (Max): 5 A, Voltage - Collector Emitter Breakdown (Max): 20 V, Power - Max: 1 W.

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2SB1131S-AE Hersteller : ONSEMI SNYOS08341-1.pdf?t.download=true&u=5oefqw Description: ONSEMI - 2SB1131S-AE - 2SB1131 - BIPOLAR PNP TRANSISTOR, 5A 20V
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 12000 Stücke:
Lieferzeit 14-21 Tag (e)