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2SB1131T-AE onsemi

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Hersteller: onsemi
Description: BIP PNP 5A 20V
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 20 V
Current - Collector (Ic) (Max): 5 A
Supplier Device Package: 3-MP
Frequency - Transition: 320MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 60mA, 3A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk

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Anzahl	Preis
1268+	0.4 EUR

Mindestbestellmenge: 1268

Im Einkaufswagen Stück im Wert von UAH

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Technische Details 2SB1131T-AE onsemi

Description: BIP PNP 5A 20V, Power - Max: 1 W, Voltage - Collector Emitter Breakdown (Max): 20 V, Current - Collector (Ic) (Max): 5 A, Supplier Device Package: 3-MP, Frequency - Transition: 320MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V, Current - Collector Cutoff (Max): 500nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 500mV @ 60mA, 3A, Operating Temperature: 150°C (TJ), Transistor Type: PNP, Mounting Type: Through Hole, Package / Case: TO-226-3, TO-92-3 Long Body, Packaging: Bulk.