2SB1151-S1-AZ

2SB1151-S1-AZ Renesas Electronics Corporation


NECCS03121-1.pdf?t.download=true&u=5oefqw
Hersteller: Renesas Electronics Corporation
Description: TRANS PNP 60V 5A TO-126
Power - Max: 1.3 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 5 A
Supplier Device Package: TO-126
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 1V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 200mA, 2A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Part Status: Active
Packaging: Bulk
auf Bestellung 1915 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
226+2.02 EUR
Mindestbestellmenge: 226
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details 2SB1151-S1-AZ Renesas Electronics Corporation

Description: TRANS PNP 60V 5A TO-126, Power - Max: 1.3 W, Voltage - Collector Emitter Breakdown (Max): 60 V, Current - Collector (Ic) (Max): 5 A, Supplier Device Package: TO-126, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 1V, Current - Collector Cutoff (Max): 10µA (ICBO), Vce Saturation (Max) @ Ib, Ic: 300mV @ 200mA, 2A, Operating Temperature: 150°C (TJ), Transistor Type: PNP, Mounting Type: Through Hole, Package / Case: TO-225AA, TO-126-3, Part Status: Active, Packaging: Bulk.