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2SB1165S

2SB1165S onsemi

SNYOS08493-1.pdf?t.download=true&u=5oefqw
Hersteller: onsemi
Description: POWER BIPOLAR TRANSISTOR, PNP
Power - Max: 1.2 W
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 5 A
Supplier Device Package: TO-126LP
Frequency - Transition: 130MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 500mA, 2V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 150mA, 3A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Packaging: Bulk
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Technische Details 2SB1165S onsemi

Description: POWER BIPOLAR TRANSISTOR, PNP, Power - Max: 1.2 W, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 5 A, Supplier Device Package: TO-126LP, Frequency - Transition: 130MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 500mA, 2V, Current - Collector Cutoff (Max): 1µA (ICBO), Vce Saturation (Max) @ Ib, Ic: 550mV @ 150mA, 3A, Operating Temperature: 150°C (TJ), Transistor Type: PNP, Mounting Type: Through Hole, Package / Case: TO-225AA, TO-126-3, Packaging: Bulk.