2SB1168S onsemi
Hersteller: onsemiDescription: POWER BIPOLAR TRANSISTOR, PNP
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 500mA, 5V
Frequency - Transition: 130MHz
Supplier Device Package: TO-126LP
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.2 W
auf Bestellung 17267 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 701+ | 0.72 EUR |
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Technische Details 2SB1168S onsemi
Description: POWER BIPOLAR TRANSISTOR, PNP, Packaging: Bulk, Package / Case: TO-225AA, TO-126-3, Mounting Type: Through Hole, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A, Current - Collector Cutoff (Max): 1µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 500mA, 5V, Frequency - Transition: 130MHz, Supplier Device Package: TO-126LP, Current - Collector (Ic) (Max): 4 A, Voltage - Collector Emitter Breakdown (Max): 100 V, Power - Max: 1.2 W.
Weitere Produktangebote 2SB1168S nach Preis ab 0.6 EUR bis 0.66 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
| 2SB1168S | Hersteller : ON Semiconductor |
Trans GP BJT PNP 100V 4A 1200mW 3-Pin TO-126LP |
auf Bestellung 17267 Stücke: Lieferzeit 14-21 Tag (e) |
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| 2SB1168S | Hersteller : ONSEMI |
Description: ONSEMI - 2SB1168S - 2SB1168S, SINGLE BIPOLAR TRANSISTORS tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 17267 Stücke: Lieferzeit 14-21 Tag (e) |