2SB1189T100Q Rohm Semiconductor
Hersteller: Rohm Semiconductor
Description: TRANS PNP 80V 0.7A MPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
Frequency - Transition: 100MHz
Supplier Device Package: MPT3
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
| Anzahl | Privatkunde |
|---|---|
| 1000+ | 0.5 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
10-14 Tag (e)
Mindestmenge:
1000 Stücke
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Produktbewertung abgeben
Technische Details 2SB1189T100Q Rohm Semiconductor
Description: TRANS PNP 80V 0.7A MPT3, Packaging: Tape & Reel (TR), Package / Case: TO-243AA, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA, Current - Collector Cutoff (Max): 500nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V, Frequency - Transition: 100MHz, Supplier Device Package: MPT3, Part Status: Not For New Designs, Current - Collector (Ic) (Max): 700 mA, Voltage - Collector Emitter Breakdown (Max): 80 V, Power - Max: 2 W.
Weitere Produktangebote 2SB1189T100Q nach Preis ab 0.58 EUR bis 1.87 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
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2SB1189T100Q | ROHM Semiconductor |
Bipolar Transistors - BJT PNP 80V 0.7A |
auf Bestellung 79 Stücke: Lieferzeit 10-14 Tag (e) |
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2SB1189T100Q | Rohm Semiconductor |
Description: TRANS PNP 80V 0.7A MPT3 Packaging: Cut Tape (CT) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V Frequency - Transition: 100MHz Supplier Device Package: MPT3 Part Status: Not For New Designs Current - Collector (Ic) (Max): 700 mA Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 2 W |
auf Bestellung 1383 Stücke: Lieferzeit 10-14 Tag (e) |
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| 2SB1189 T100Q | ROHM | SOT89 |
auf Bestellung 798 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| 2SB1189T100Q |
|
Hersteller: ROHM Semiconductor
Bipolar Transistors - BJT PNP 80V 0.7A
Bipolar Transistors - BJT PNP 80V 0.7A
auf Bestellung 79 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 1.64 EUR |
| 10+ | 1.02 EUR |
| 2SB1189T100Q |
|
Hersteller: Rohm Semiconductor
Description: TRANS PNP 80V 0.7A MPT3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
Frequency - Transition: 100MHz
Supplier Device Package: MPT3
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
Description: TRANS PNP 80V 0.7A MPT3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
Frequency - Transition: 100MHz
Supplier Device Package: MPT3
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
auf Bestellung 1383 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 12+ | 1.87 EUR |
| 18+ | 1.17 EUR |
| 100+ | 0.76 EUR |
| 500+ | 0.58 EUR |
| 2SB1189 T100Q |
Hersteller: ROHM
SOT89
SOT89
auf Bestellung 798 Stücke:
Lieferzeit 21-28 Tag (e)