2SB1201T-TL-E onsemi
Hersteller: onsemi
Description: TRANS PNP 50V 2A TP-FA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: TP-FA
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 800 mW
| Anzahl | Preis |
|---|---|
| 13+ | 1.44 EUR |
| 20+ | 0.91 EUR |
| 100+ | 0.59 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details 2SB1201T-TL-E onsemi
Description: TRANS PNP 50V 2A TP-FA, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 1A, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V, Frequency - Transition: 150MHz, Supplier Device Package: TP-FA, Current - Collector (Ic) (Max): 2 A, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 800 mW.
Weitere Produktangebote 2SB1201T-TL-E
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
2SB1201T-TL-E | ON Semiconductor |
Bipolar Transistors - BJT BIP PNP 2A 50V |
auf Bestellung 1987 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| 2SB1201T-TL-E |
|
Hersteller: ON Semiconductor
Bipolar Transistors - BJT BIP PNP 2A 50V
Bipolar Transistors - BJT BIP PNP 2A 50V
auf Bestellung 1987 Stücke:
Lieferzeit 10-14 Tag (e)