2SB1205S-E onsemi
Hersteller: onsemiDescription: TRANS PNP 20V 5A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 60mA, 3A
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 500mA, 2V
Frequency - Transition: 320MHz
Supplier Device Package: TP
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 1 W
auf Bestellung 31500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 878+ | 0.56 EUR |
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Technische Details 2SB1205S-E onsemi
Description: TRANS PNP 20V 5A TP, Packaging: Bulk, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 500mV @ 60mA, 3A, Current - Collector Cutoff (Max): 500nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 500mA, 2V, Frequency - Transition: 320MHz, Supplier Device Package: TP, Part Status: Obsolete, Current - Collector (Ic) (Max): 5 A, Voltage - Collector Emitter Breakdown (Max): 20 V, Power - Max: 1 W.
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| 2SB1205S-E | Hersteller : ON Semiconductor |
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2SB1205S-E | Hersteller : onsemi |
Description: TRANS PNP 20V 5A TP Packaging: Bulk Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 60mA, 3A Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 500mA, 2V Frequency - Transition: 320MHz Supplier Device Package: TP Part Status: Obsolete Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 1 W |
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