Technische Details 2SB1215T-TL-H ON Semiconductor
Description: TRANS PNP 100V 3A TP-FA, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 500mV @ 150mA, 1.5A, Current - Collector Cutoff (Max): 1µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 5V, Frequency - Transition: 130MHz, Supplier Device Package: TP-FA, Current - Collector (Ic) (Max): 3 A, Voltage - Collector Emitter Breakdown (Max): 100 V, Power - Max: 1 W.
Weitere Produktangebote 2SB1215T-TL-H nach Preis ab 0.77 EUR bis 0.83 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||
|---|---|---|---|---|---|---|---|
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2SB1215T-TL-H | ONSEMI |
 Description: ONSEMI - 2SB1215T-TL-H - EACHtariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 10500 Stücke: Lieferzeit 14-21 Tag (e) |
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2SB1215T-TL-H | onsemi |
Description: TRANS PNP 100V 3A TP-FA Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 150mA, 1.5A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 5V Frequency - Transition: 130MHz Supplier Device Package: TP-FA Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 1 W |
auf Bestellung 9400 Stücke: Lieferzeit 10-14 Tag (e) |
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| 2SB1215T-TL-H | ON Semiconductor |
Bipolar Transistors - BJT BIP PNP 3A 100V |
auf Bestellung 1290 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| 2SB1215T-TL-H |
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Hersteller: ONSEMI
Description: ONSEMI - 2SB1215T-TL-H - EACH
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
Description: ONSEMI - 2SB1215T-TL-H - EACH
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 10500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1400+ | 0.77 EUR |
| 2SB1215T-TL-H |
|
Hersteller: onsemi
Description: TRANS PNP 100V 3A TP-FA
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 150mA, 1.5A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 5V
Frequency - Transition: 130MHz
Supplier Device Package: TP-FA
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1 W
Description: TRANS PNP 100V 3A TP-FA
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 150mA, 1.5A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 5V
Frequency - Transition: 130MHz
Supplier Device Package: TP-FA
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1 W
auf Bestellung 9400 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 634+ | 0.83 EUR |
| 2SB1215T-TL-H |
|
Hersteller: ON Semiconductor
Bipolar Transistors - BJT BIP PNP 3A 100V
Bipolar Transistors - BJT BIP PNP 3A 100V
auf Bestellung 1290 Stücke:
Lieferzeit 10-14 Tag (e)