2SB1216T-E onsemi
Hersteller: onsemi
Description: TRANS PNP 100V 4A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 5V
Frequency - Transition: 130MHz
Supplier Device Package: TP
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1 W
| Anzahl | Preis |
|---|---|
| 833+ | 0.58 EUR |
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Technische Details 2SB1216T-E onsemi
Description: TRANS PNP 100V 4A TP, Packaging: Bulk, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A, Current - Collector Cutoff (Max): 1µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 5V, Frequency - Transition: 130MHz, Supplier Device Package: TP, Current - Collector (Ic) (Max): 4 A, Voltage - Collector Emitter Breakdown (Max): 100 V, Power - Max: 1 W.
Weitere Produktangebote 2SB1216T-E
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Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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2SB1216T-E | ON Semiconductor |
Bipolar Transistors - BJT BIP PNP 4A 100V |
auf Bestellung 1336 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| 2SB1216T-E |
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Hersteller: ON Semiconductor
Bipolar Transistors - BJT BIP PNP 4A 100V
Bipolar Transistors - BJT BIP PNP 4A 100V
auf Bestellung 1336 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH