auf Bestellung 16500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 2037+ | 0.27 EUR |
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Technische Details 2SB1229S-AA Aptina Imaging
Description: TRANSISTOR, Packaging: Bulk, Package / Case: TO-226-3, TO-92-3 (TO-226AA), Mounting Type: Through Hole, Transistor Type: PNP, Operating Temperature: -55°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 1A, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V, Frequency - Transition: 150MHz, Supplier Device Package: 3-NP, Current - Collector (Ic) (Max): 2 A, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 750 mW.
Weitere Produktangebote 2SB1229S-AA nach Preis ab 0.3 EUR bis 0.3 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||
|---|---|---|---|---|---|---|---|---|---|
| 2SB1229S-AA | Hersteller : onsemi |
 Description: TRANSISTORPackaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V Frequency - Transition: 150MHz Supplier Device Package: 3-NP Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 750 mW |
auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
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| 2SB1229S-AA | Hersteller : ONSEMI |
Description: ONSEMI - 2SB1229S-AA - 2SB1229 - TRANSISTOR tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 16500 Stücke: Lieferzeit 14-21 Tag (e) |