Produkte > ONSEMI > 2SB1229S-AA

2SB1229S-AA onsemi

ONSMS23302-1.pdf?t.download=true&u=5oefqw

Hersteller: onsemi
Description: TRANSISTOR
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 1A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Bulk
Power - Max: 750 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 2 A
Supplier Device Package: 3-NP

auf Bestellung 15000 Stücke:

Lieferzeit 10-14 Tag (e)

Anzahl	Preis
1665+	0.3 EUR

Mindestbestellmenge: 1665

Im Einkaufswagen Stück im Wert von UAH

Produktrezensionen

Produktbewertung abgeben

Technische Details 2SB1229S-AA onsemi

Description: TRANSISTOR, Frequency - Transition: 150MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 1A, Operating Temperature: -55°C ~ 150°C (TJ), Transistor Type: PNP, Mounting Type: Through Hole, Package / Case: TO-226-3, TO-92-3 (TO-226AA), Packaging: Bulk, Power - Max: 750 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 2 A, Supplier Device Package: 3-NP.