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Technische Details 2SB1229S-AA Aptina Imaging
Description: TRANSISTOR, Frequency - Transition: 150MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 1A, Operating Temperature: -55°C ~ 150°C (TJ), Transistor Type: PNP, Mounting Type: Through Hole, Package / Case: TO-226-3, TO-92-3 (TO-226AA), Packaging: Bulk, Power - Max: 750 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 2 A, Supplier Device Package: 3-NP.
Weitere Produktangebote 2SB1229S-AA nach Preis ab 0.36 EUR bis 0.42 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||
|---|---|---|---|---|---|---|---|
| 2SB1229S-AA | onsemi |
 Description: TRANSISTORFrequency - Transition: 150MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 1A Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: PNP Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Packaging: Bulk Power - Max: 750 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 2 A Supplier Device Package: 3-NP |
auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
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| 2SB1229S-AA | ONSEMI |
Description: ONSEMI - 2SB1229S-AA - 2SB1229 - TRANSISTOR tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 16500 Stücke: Lieferzeit 14-21 Tag (e) |
|
| 2SB1229S-AA |
|
Hersteller: onsemi
Description: TRANSISTOR
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 1A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Bulk
Power - Max: 750 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 2 A
Supplier Device Package: 3-NP
Description: TRANSISTOR
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 1A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Bulk
Power - Max: 750 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 2 A
Supplier Device Package: 3-NP
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1665+ | 0.36 EUR |
| 2SB1229S-AA |
|
Hersteller: ONSEMI
Description: ONSEMI - 2SB1229S-AA - 2SB1229 - TRANSISTOR
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
Description: ONSEMI - 2SB1229S-AA - 2SB1229 - TRANSISTOR
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 16500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2004+ | 0.42 EUR |