2SB1580T100 ROHM Semiconductor
| Anzahl | Preis |
|---|---|
| 2+ | 2.11 EUR |
| 10+ | 1.99 EUR |
| 100+ | 1.31 EUR |
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Technische Details 2SB1580T100 ROHM Semiconductor
Description: TRANS PNP DARL 100V 2A MPT3, Power - Max: 2 W, Voltage - Collector Emitter Breakdown (Max): 100 V, Current - Collector (Ic) (Max): 2 A, Supplier Device Package: MPT3, Frequency - Transition: 50MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 1A, 2V, Current - Collector Cutoff (Max): 10µA (ICBO), Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A, Operating Temperature: 150°C (TJ), Transistor Type: PNP - Darlington, Mounting Type: Surface Mount, Package / Case: TO-243AA, Packaging: Tape & Reel (TR).
Weitere Produktangebote 2SB1580T100
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2SB1580T100 | Hersteller : Rohm Semiconductor |
 Description: TRANS PNP DARL 100V 2A MPT3Power - Max: 2 W Voltage - Collector Emitter Breakdown (Max): 100 V Current - Collector (Ic) (Max): 2 A Supplier Device Package: MPT3 Frequency - Transition: 50MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 1A, 2V Current - Collector Cutoff (Max): 10µA (ICBO) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A Operating Temperature: 150°C (TJ) Transistor Type: PNP - Darlington Mounting Type: Surface Mount Package / Case: TO-243AA Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
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2SB1580T100 | Hersteller : Rohm Semiconductor |
Description: TRANS PNP DARL 100V 2A MPT3 Power - Max: 2 W Voltage - Collector Emitter Breakdown (Max): 100 V Current - Collector (Ic) (Max): 2 A Supplier Device Package: MPT3 Frequency - Transition: 50MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 1A, 2V Current - Collector Cutoff (Max): 10µA (ICBO) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A Operating Temperature: 150°C (TJ) Transistor Type: PNP - Darlington Mounting Type: Surface Mount Package / Case: TO-243AA Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |