Technische Details 2SB1707 TL ROHM
Description: TRANS PNP 12V 4A TSMT3, Power - Max: 500 mW, Voltage - Collector Emitter Breakdown (Max): 12 V, Current - Collector (Ic) (Max): 4 A, Supplier Device Package: TSMT3, Frequency - Transition: 250MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 200mA, 2V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 250mV @ 40mA, 2A, Operating Temperature: 150°C (TJ), Transistor Type: PNP, Mounting Type: Surface Mount, Package / Case: SC-96, Packaging: Tape & Reel (TR).
Weitere Produktangebote 2SB1707 TL
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| 2SB1707TL | Hersteller : ROHM |
09+ |
auf Bestellung 540018 Stücke: Lieferzeit 21-28 Tag (e) |
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2SB1707TL | Hersteller : Rohm Semiconductor |
Description: TRANS PNP 12V 4A TSMT3Power - Max: 500 mW Voltage - Collector Emitter Breakdown (Max): 12 V Current - Collector (Ic) (Max): 4 A Supplier Device Package: TSMT3 Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 200mA, 2V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 250mV @ 40mA, 2A Operating Temperature: 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: SC-96 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
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2SB1707TL | Hersteller : Rohm Semiconductor |
Description: TRANS PNP 12V 4A TSMT3Power - Max: 500 mW Voltage - Collector Emitter Breakdown (Max): 12 V Current - Collector (Ic) (Max): 4 A Supplier Device Package: TSMT3 Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 200mA, 2V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 250mV @ 40mA, 2A Operating Temperature: 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: SC-96 Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
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2SB1707TL | Hersteller : ROHM Semiconductor |
Bipolar Transistors - BJT PNP 12V 4A |
Produkt ist nicht verfügbar |

