2SB1733TL Rohm Semiconductor
auf Bestellung 2380 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1159+ | 0.13 EUR |
| 1214+ | 0.12 EUR |
| 2000+ | 0.11 EUR |
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Technische Details 2SB1733TL Rohm Semiconductor
Description: TRANS PNP 30V 1A TUMT3, Packaging: Tape & Reel (TR), Package / Case: 3-SMD, Flat Leads, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 350mV @ 25mA, 500mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V, Frequency - Transition: 320MHz, Supplier Device Package: TUMT3, Current - Collector (Ic) (Max): 1 A, Voltage - Collector Emitter Breakdown (Max): 30 V, Power - Max: 800 mW.
Weitere Produktangebote 2SB1733TL nach Preis ab 0.29 EUR bis 0.99 EUR
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2SB1733TL | Hersteller : Rohm Semiconductor |
 Trans GP BJT PNP 30V 1A 800mW 3-Pin TUMT T/R |
auf Bestellung 2707 Stücke: Lieferzeit 14-21 Tag (e) |
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2SB1733TL | Hersteller : Rohm Semiconductor |
Description: TRANS PNP 30V 1A TUMT3 Packaging: Cut Tape (CT) Package / Case: 3-SMD, Flat Leads Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 350mV @ 25mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V Frequency - Transition: 320MHz Supplier Device Package: TUMT3 Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 800 mW |
auf Bestellung 165 Stücke: Lieferzeit 10-14 Tag (e) |
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2SB1733TL | Hersteller : ROHM Semiconductor |
Bipolar Transistors - BJT 30V 1A PNP LOW |
auf Bestellung 2536 Stücke: Lieferzeit 14-28 Tag (e) |
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| 2SB1733TL | Hersteller : ROHM |
SOT23 |
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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2SB1733TL | Hersteller : Rohm Semiconductor |
Description: TRANS PNP 30V 1A TUMT3 Packaging: Tape & Reel (TR) Package / Case: 3-SMD, Flat Leads Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 350mV @ 25mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V Frequency - Transition: 320MHz Supplier Device Package: TUMT3 Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 800 mW |
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