2SB865-AE ONSEMI
Hersteller: ONSEMI
Description: ONSEMI - 2SB865-AE - 2SB865-AE, SINGLE BIPOLAR TRANSISTORS
tariffCode: 85412900
productTraceability: Yes-Date/Lot Code
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
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Technische Details 2SB865-AE ONSEMI
Description: TRANS PNP DARL 50V 1.5A 3-MP, Packaging: Bulk, Part Status: Active, Package / Case: TO-226-3, TO-92-3 Long Body, Mounting Type: Through Hole, Transistor Type: PNP - Darlington, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500µA, 500mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 4000 @ 500mA, 2V, Frequency - Transition: 120MHz, Supplier Device Package: 3-MP, Current - Collector (Ic) (Max): 1.5 A, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 900 mW.
Weitere Produktangebote 2SB865-AE nach Preis ab 0.44 EUR bis 0.63 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||
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2SB865-AE | onsemi |
Description: TRANS PNP DARL 50V 1.5A 3-MP Packaging: Bulk Part Status: Active Package / Case: TO-226-3, TO-92-3 Long Body Mounting Type: Through Hole Transistor Type: PNP - Darlington Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500µA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 4000 @ 500mA, 2V Frequency - Transition: 120MHz Supplier Device Package: 3-MP Current - Collector (Ic) (Max): 1.5 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 900 mW |
auf Bestellung 26000 Stücke: Lieferzeit 10-14 Tag (e) |
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| 2SB865-AE | ON Semiconductor |
2SB865-AE |
auf Bestellung 26000 Stücke: Lieferzeit 14-21 Tag (e) |
|
| 2SB865-AE |
|
Hersteller: onsemi
Description: TRANS PNP DARL 50V 1.5A 3-MP
Packaging: Bulk
Part Status: Active
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500µA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 4000 @ 500mA, 2V
Frequency - Transition: 120MHz
Supplier Device Package: 3-MP
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
Description: TRANS PNP DARL 50V 1.5A 3-MP
Packaging: Bulk
Part Status: Active
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500µA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 4000 @ 500mA, 2V
Frequency - Transition: 120MHz
Supplier Device Package: 3-MP
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
auf Bestellung 26000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 865+ | 0.63 EUR |
| 2SB865-AE |
|
Hersteller: ON Semiconductor
2SB865-AE
2SB865-AE
auf Bestellung 26000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1304+ | 0.5 EUR |
| 10000+ | 0.44 EUR |