2SB886 Sanyo
Hersteller: Sanyo
Description: POWER BIPOLAR TRANSISTOR, 8A, 10
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 8mA, 4A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 1500 @ 4A, 3V
Frequency - Transition: 20MHz
Supplier Device Package: TO-220AB
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.75 W
Description: POWER BIPOLAR TRANSISTOR, 8A, 10
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 8mA, 4A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 1500 @ 4A, 3V
Frequency - Transition: 20MHz
Supplier Device Package: TO-220AB
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.75 W
auf Bestellung 2646 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
268+ | 1.85 EUR |
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Technische Details 2SB886 Sanyo
Description: POWER BIPOLAR TRANSISTOR, 8A, 10, Packaging: Bulk, Package / Case: TO-220-3, Mounting Type: Through Hole, Transistor Type: PNP - Darlington, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1.5V @ 8mA, 4A, Current - Collector Cutoff (Max): 100µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 1500 @ 4A, 3V, Frequency - Transition: 20MHz, Supplier Device Package: TO-220AB, Part Status: Active, Current - Collector (Ic) (Max): 8 A, Voltage - Collector Emitter Breakdown (Max): 100 V, Power - Max: 1.75 W.
Weitere Produktangebote 2SB886 nach Preis ab 1.85 EUR bis 1.85 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||
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2SB886 | Hersteller : onsemi |
Description: POWER BIPOLAR TRANSISTOR, 8A, 10 Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: PNP - Darlington Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 8mA, 4A Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 1500 @ 4A, 3V Frequency - Transition: 20MHz Supplier Device Package: TO-220AB Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 1.75 W |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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2SB886 | Hersteller : ONSEMI |
Description: ONSEMI - 2SB886 - 2SB886, SINGLE BIPOLAR TRANSISTORS tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 2646 Stücke: Lieferzeit 14-21 Tag (e) |
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2SB886 |
auf Bestellung 10654 Stücke: Lieferzeit 21-28 Tag (e) |