2SB927T-AE Sanyo
Hersteller: Sanyo
Description: PNP SILICON TRANSISTOR
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 75mA, 1.5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: 3-MP
Part Status: Active
Current - Collector (Ic) (Max): 2.5 A
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 1 W
| Anzahl | Privatkunde |
|---|---|
| 2664+ | 0.21 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
10-14 Tag (e)
Mindestmenge:
2664 Stücke
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Technische Details 2SB927T-AE Sanyo
Description: 2SB927 - PNP EPITAXIAL PLANAR SI, Packaging: Bulk, Package / Case: TO-226-3, TO-92-3 Long Body, Mounting Type: Through Hole, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 600mV @ 75mA, 1.5A, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V, Frequency - Transition: 150MHz, Supplier Device Package: 3-MP, Part Status: Active, Current - Collector (Ic) (Max): 2.5 A, Voltage - Collector Emitter Breakdown (Max): 25 V, Power - Max: 1 W.
Weitere Produktangebote 2SB927T-AE nach Preis ab 0.2 EUR bis 0.21 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||
|---|---|---|---|---|---|---|---|
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2SB927T-AE | onsemi |
Description: 2SB927 - PNP EPITAXIAL PLANAR SI Packaging: Bulk Package / Case: TO-226-3, TO-92-3 Long Body Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 75mA, 1.5A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V Frequency - Transition: 150MHz Supplier Device Package: 3-MP Part Status: Active Current - Collector (Ic) (Max): 2.5 A Voltage - Collector Emitter Breakdown (Max): 25 V Power - Max: 1 W |
auf Bestellung 8000 Stücke: Lieferzeit 10-14 Tag (e) |
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| 2SB927T-AE | ON Semiconductor |
2SB927T-AE |
auf Bestellung 8000 Stücke: Lieferzeit 14-21 Tag (e) |
|
| 2SB927T-AE |
|
Hersteller: onsemi
Description: 2SB927 - PNP EPITAXIAL PLANAR SI
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 75mA, 1.5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: 3-MP
Part Status: Active
Current - Collector (Ic) (Max): 2.5 A
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 1 W
Description: 2SB927 - PNP EPITAXIAL PLANAR SI
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 75mA, 1.5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: 3-MP
Part Status: Active
Current - Collector (Ic) (Max): 2.5 A
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 1 W
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2664+ | 0.21 EUR |
| 2SB927T-AE |
|
Hersteller: ON Semiconductor
2SB927T-AE
2SB927T-AE
auf Bestellung 8000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3258+ | 0.2 EUR |