2SB927T-AE Sanyo
Hersteller: Sanyo
Description: PNP SILICON TRANSISTOR
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 25 V
Current - Collector (Ic) (Max): 2.5 A
Supplier Device Package: 3-MP
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 75mA, 1.5A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Part Status: Active
Packaging: Bulk
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Technische Details 2SB927T-AE Sanyo
Description: 2SB927 - PNP EPITAXIAL PLANAR SI, Power - Max: 1 W, Voltage - Collector Emitter Breakdown (Max): 25 V, Current - Collector (Ic) (Max): 2.5 A, Supplier Device Package: 3-MP, Frequency - Transition: 150MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 600mV @ 75mA, 1.5A, Operating Temperature: 150°C (TJ), Transistor Type: PNP, Mounting Type: Through Hole, Package / Case: TO-226-3, TO-92-3 Long Body, Part Status: Active, Packaging: Bulk.
Weitere Produktangebote 2SB927T-AE nach Preis ab 0.18 EUR bis 0.18 EUR
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2SB927T-AE | onsemi |
Description: 2SB927 - PNP EPITAXIAL PLANAR SI Power - Max: 1 W Voltage - Collector Emitter Breakdown (Max): 25 V Current - Collector (Ic) (Max): 2.5 A Supplier Device Package: 3-MP Frequency - Transition: 150MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 600mV @ 75mA, 1.5A Operating Temperature: 150°C (TJ) Transistor Type: PNP Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Part Status: Active Packaging: Bulk |
auf Bestellung 8000 Stücke: Lieferzeit 10-14 Tag (e) |
|
| 2SB927T-AE |
|
Hersteller: onsemi
Description: 2SB927 - PNP EPITAXIAL PLANAR SI
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 25 V
Current - Collector (Ic) (Max): 2.5 A
Supplier Device Package: 3-MP
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 75mA, 1.5A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Part Status: Active
Packaging: Bulk
Description: 2SB927 - PNP EPITAXIAL PLANAR SI
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 25 V
Current - Collector (Ic) (Max): 2.5 A
Supplier Device Package: 3-MP
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 75mA, 1.5A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Part Status: Active
Packaging: Bulk
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2664+ | 0.18 EUR |