2SC2229-Y(T6MIT1FM Toshiba Semiconductor and Storage

Description: TRANS NPN 150V 0.05A TO-92MOD, Power - Max: 800 mW, Voltage - Collector Emitter Breakdown (Max): 150 V, Current - Collector (Ic) (Max): 50 mA, Part Status: Obsolete, Supplier Device Package: TO-92MOD, Frequency - Transition: 120MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA, Operating Temperature: 150°C (TJ), Transistor Type: NPN, Mounting Type: Through Hole, Package / Case: TO-226-3, TO-92-3 Long Body, Packaging: Bulk.