2SC2412-S Yangjie Technology

Description: Transistors - Bipolar (BJT) - Si, Power - Max: 200 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 150 mA, Part Status: Active, Supplier Device Package: SOT-23, Frequency - Transition: 150MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 1mA, 6V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA, Operating Temperature: -55°C ~ 150°C (TJ), Transistor Type: NPN, Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).