2SC2712-GR,LF Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 0.15A S-MINI
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Part Status: Active
Supplier Device Package: S-Mini
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Operating Temperature: 125°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.064 EUR |
| 6000+ | 0.057 EUR |
| 9000+ | 0.054 EUR |
| 15000+ | 0.05 EUR |
| 21000+ | 0.048 EUR |
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Technische Details 2SC2712-GR,LF Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 0.15A S-MINI, Power - Max: 150 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 150 mA, Part Status: Active, Supplier Device Package: S-Mini, Frequency - Transition: 80MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA, Operating Temperature: 125°C (TJ), Transistor Type: NPN, Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).
Weitere Produktangebote 2SC2712-GR,LF nach Preis ab 0.058 EUR bis 0.36 EUR
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2SC2712-GR,LF | Toshiba Semiconductor and Storage |
Description: TRANS NPN 50V 0.15A S-MINI Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 125°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: S-Mini Part Status: Active Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW |
auf Bestellung 24151 Stücke: Lieferzeit 10-14 Tag (e) |
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2SC2712-GR,LF | Toshiba |
Bipolar Transistors - BJT Transistor Lo Freq 0.15A 50V |
auf Bestellung 13862 Stücke: Lieferzeit 10-14 Tag (e) |
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| 2SC2712-GR,LF |
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Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 0.15A S-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Description: TRANS NPN 50V 0.15A S-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
auf Bestellung 24151 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 67+ | 0.31 EUR |
| 104+ | 0.2 EUR |
| 168+ | 0.13 EUR |
| 500+ | 0.092 EUR |
| 1000+ | 0.08 EUR |
| 2SC2712-GR,LF |
|
Hersteller: Toshiba
Bipolar Transistors - BJT Transistor Lo Freq 0.15A 50V
Bipolar Transistors - BJT Transistor Lo Freq 0.15A 50V
auf Bestellung 13862 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 0.36 EUR |
| 16+ | 0.21 EUR |
| 100+ | 0.13 EUR |
| 500+ | 0.096 EUR |
| 1000+ | 0.086 EUR |
| 3000+ | 0.065 EUR |
| 6000+ | 0.058 EUR |