Produkte > TOSHIBA > 2SC2714-O(TE85L,F)
2SC2714-O(TE85L,F)

2SC2714-O(TE85L,F) Toshiba

Toshiba_05282020_2SC2714_datasheet_en_20140301-1854256.pdf
Hersteller: Toshiba
RF Bipolar Transistors RF Device FM band 30V Amp 23dB 100mW
auf Bestellung 1205 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+1.06 EUR
10+1.01 EUR
100+0.67 EUR
500+0.56 EUR
1000+0.46 EUR
3000+0.18 EUR
9000+0.14 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details 2SC2714-O(TE85L,F) Toshiba

Description: RF TRANS NPN 30V 550MHZ S MINI, Part Status: Active, Supplier Device Package: S-Mini, Noise Figure (dB Typ @ f): 2.5dB @ 100MHz, Frequency - Transition: 550MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 6V, Voltage - Collector Emitter Breakdown (Max): 30V, Current - Collector (Ic) (Max): 20mA, Power - Max: 100mW, Gain: 23dB, Operating Temperature: 125°C (TJ), Transistor Type: NPN, Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).

Weitere Produktangebote 2SC2714-O(TE85L,F)

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
2SC2714-O(TE85L,F) 2SC2714-O(TE85L,F) Toshiba Semiconductor and Storage Description: RF TRANS NPN 30V 550MHZ S MINI
Part Status: Active
Supplier Device Package: S-Mini
Noise Figure (dB Typ @ f): 2.5dB @ 100MHz
Frequency - Transition: 550MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 6V
Voltage - Collector Emitter Breakdown (Max): 30V
Current - Collector (Ic) (Max): 20mA
Power - Max: 100mW
Gain: 23dB
Operating Temperature: 125°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
2SC2714-O(TE85L,F) 2SC2714-O(TE85L,F) Toshiba Semiconductor and Storage Description: RF TRANS NPN 30V 550MHZ S MINI
Operating Temperature: 125°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: S-Mini
Noise Figure (dB Typ @ f): 2.5dB @ 100MHz
Frequency - Transition: 550MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 6V
Voltage - Collector Emitter Breakdown (Max): 30V
Current - Collector (Ic) (Max): 20mA
Power - Max: 100mW
Gain: 23dB
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2SC2714-O(TE85L,F)
2SC2714-O(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: RF TRANS NPN 30V 550MHZ S MINI
Part Status: Active
Supplier Device Package: S-Mini
Noise Figure (dB Typ @ f): 2.5dB @ 100MHz
Frequency - Transition: 550MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 6V
Voltage - Collector Emitter Breakdown (Max): 30V
Current - Collector (Ic) (Max): 20mA
Power - Max: 100mW
Gain: 23dB
Operating Temperature: 125°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
2SC2714-O(TE85L,F)
2SC2714-O(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: RF TRANS NPN 30V 550MHZ S MINI
Operating Temperature: 125°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: S-Mini
Noise Figure (dB Typ @ f): 2.5dB @ 100MHz
Frequency - Transition: 550MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 6V
Voltage - Collector Emitter Breakdown (Max): 30V
Current - Collector (Ic) (Max): 20mA
Power - Max: 100mW
Gain: 23dB
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH