2SC2812-6-M-TB-E onsemi
Hersteller: onsemi
Description: TRANS NPN 50V 0.15A 3-CP
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Supplier Device Package: 3-CP
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Part Status: Active
Packaging: Bulk
| Anzahl | Preis |
|---|---|
| 7869+ | 0.06 EUR |
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Technische Details 2SC2812-6-M-TB-E onsemi
Description: TRANS NPN 50V 0.15A 3-CP, Power - Max: 200 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 150 mA, Supplier Device Package: 3-CP, Frequency - Transition: 100MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 6V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA, Operating Temperature: 150°C (TJ), Transistor Type: NPN, Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Part Status: Active, Packaging: Bulk.
Weitere Produktangebote 2SC2812-6-M-TB-E nach Preis ab 0.041 EUR bis 0.041 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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Preis |
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| 2SC2812-6-M-TB-E | ON Semiconductor |
2SC2812-6-M-TB-E |
auf Bestellung 48000 Stücke: Lieferzeit 14-21 Tag (e) |
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| 2SC2812-6-M-TB-E |
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Hersteller: ON Semiconductor
2SC2812-6-M-TB-E
2SC2812-6-M-TB-E
auf Bestellung 48000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 13275+ | 0.041 EUR |