2SC2909S-AA ONSEMI
Hersteller: ONSEMI
Description: ONSEMI - 2SC2909S-AA - 2SC2909S-AA, SINGLE BIPOLAR TRANSISTORS
tariffCode: 85412900
productTraceability: Yes-Date/Lot Code
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
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Technische Details 2SC2909S-AA ONSEMI
Description: TRANS NPN 160V 0.07A 3-NP, Power - Max: 600 mW, Voltage - Collector Emitter Breakdown (Max): 160 V, Current - Collector (Ic) (Max): 70 mA, Supplier Device Package: 3-NP, Frequency - Transition: 150MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 10mA, 5V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 300mV @ 3mA, 30mA, Operating Temperature: 150°C (TJ), Transistor Type: NPN, Mounting Type: Through Hole, Package / Case: TO-226-3, TO-92-3 (TO-226AA), Packaging: Bulk.
Weitere Produktangebote 2SC2909S-AA nach Preis ab 0.12 EUR bis 0.14 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||
|---|---|---|---|---|---|---|---|
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2SC2909S-AA | Sanyo |
Description: TRANS NPN 160V 0.07A 3-NPPower - Max: 600 mW Voltage - Collector Emitter Breakdown (Max): 160 V Current - Collector (Ic) (Max): 70 mA Supplier Device Package: 3-NP Frequency - Transition: 150MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 10mA, 5V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 3mA, 30mA Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Packaging: Bulk |
auf Bestellung 13293 Stücke: Lieferzeit 10-14 Tag (e) |
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| 2SC2909S-AA | ON Semiconductor |
Trans GP BJT NPN 160V 0.07A 600mW 3-Pin NP |
auf Bestellung 7293 Stücke: Lieferzeit 14-21 Tag (e) |
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| 2SC2909S-AA | ON Semiconductor |
Trans GP BJT NPN 160V 0.07A 600mW 3-Pin NP |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
|
| 2SC2909S-AA |
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Hersteller: Sanyo
Description: TRANS NPN 160V 0.07A 3-NP
Power - Max: 600 mW
Voltage - Collector Emitter Breakdown (Max): 160 V
Current - Collector (Ic) (Max): 70 mA
Supplier Device Package: 3-NP
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 3mA, 30mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Bulk
Description: TRANS NPN 160V 0.07A 3-NP
Power - Max: 600 mW
Voltage - Collector Emitter Breakdown (Max): 160 V
Current - Collector (Ic) (Max): 70 mA
Supplier Device Package: 3-NP
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 3mA, 30mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Bulk
auf Bestellung 13293 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3620+ | 0.14 EUR |
| 2SC2909S-AA |
![]() |
Hersteller: ON Semiconductor
Trans GP BJT NPN 160V 0.07A 600mW 3-Pin NP
Trans GP BJT NPN 160V 0.07A 600mW 3-Pin NP
auf Bestellung 7293 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5455+ | 0.12 EUR |
| 2SC2909S-AA |
![]() |
Hersteller: ON Semiconductor
Trans GP BJT NPN 160V 0.07A 600mW 3-Pin NP
Trans GP BJT NPN 160V 0.07A 600mW 3-Pin NP
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5455+ | 0.12 EUR |


