2SC3070-AE onsemi
Hersteller: onsemiDescription: NPN SILICON TRANSISTOR
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: 3-MP
Current - Collector (Ic) (Max): 1.2 A
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 1 W
auf Bestellung 51000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1402+ | 0.5 EUR |
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Technische Details 2SC3070-AE onsemi
Description: 2SC3070 - NPN EPITAXIAL PLANAR S, Packaging: Bulk, Part Status: Active, Package / Case: TO-226-3, TO-92-3 Long Body, Mounting Type: Through Hole, Transistor Type: NPN, Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 500mA, DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 5V, Frequency - Transition: 250MHz, Supplier Device Package: 3-MP, Current - Collector (Ic) (Max): 1.2 A, Voltage - Collector Emitter Breakdown (Max): 25 V, Power - Max: 1 W.
Weitere Produktangebote 2SC3070-AE nach Preis ab 0.5 EUR bis 0.5 EUR
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2SC3070-AE | Hersteller : Sanyo |
Description: 2SC3070 - NPN EPITAXIAL PLANAR S Packaging: Bulk Part Status: Active Package / Case: TO-226-3, TO-92-3 Long Body Mounting Type: Through Hole Transistor Type: NPN Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 500mA DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 5V Frequency - Transition: 250MHz Supplier Device Package: 3-MP Current - Collector (Ic) (Max): 1.2 A Voltage - Collector Emitter Breakdown (Max): 25 V Power - Max: 1 W |
auf Bestellung 32000 Stücke: Lieferzeit 21-28 Tag (e) |
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2SC3070-AE | Hersteller : ONSEMI |
Description: ONSEMI - 2SC3070-AE - 2SC3070-AE, SINGLE BIPOLAR TRANSISTORS tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 51000 Stücke: Lieferzeit 14-21 Tag (e) |